N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 5.6A Continuous Drain Current (ID). Features 540mΩ maximum Drain-Source On-Resistance (Rds On) and 43W maximum power dissipation. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C and is housed in a lead-free, plastic D2PAK-3 (TO-263-3) surface-mount package. Ideal for power switching applications.
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Vishay IRF510STRLPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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