N-Channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a 100V drain-source breakdown voltage and a continuous drain current of 9.2A. Offers a maximum drain-source on-resistance of 270mR at a nominal gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 60W. Includes fast switching characteristics with turn-on delay time of 8.8ns and fall time of 20ns.
PackageTO-220AB
Current Rating9.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF520PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
9.2A
Current Rating
9.2A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
270mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Nominal Vgs
10V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.8ns
DC Rated Voltage
100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF520PBF Datasheet
Download the complete datasheet for Vishay IRF520PBF to view detailed technical specifications.
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