N-Channel Power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. Offers a low 160mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates within a -55°C to 175°C temperature range and boasts 88W maximum power dissipation. RoHS compliant with a 4V threshold voltage and fast switching times.
PackageTO-220AB
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF530PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
160mR
Dual Supply Voltage
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
670pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
DC Rated Voltage
100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF530PBF Datasheet
Download the complete datasheet for Vishay IRF530PBF to view detailed technical specifications.
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