N-Channel Power MOSFET, 100V Drain-Source Voltage, 28A Continuous Drain Current, and 77mΩ Max Drain-Source On-Resistance. Features include a 150W Max Power Dissipation, 1.7nF Input Capacitance, and 4V Threshold Voltage. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-220AB package, suitable for through-hole mounting, and is RoHS compliant. Operating temperature range is -55°C to 175°C.
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Vishay IRF540PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 28A |
| Current | 28A |
| Current Rating | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 77mR |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 10.51mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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