N-Channel Power MOSFET, surface mount, TO-263 package. Features 100V drain-source voltage, 28A continuous drain current, and 77mΩ drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. Offers a maximum power dissipation of 150W and a maximum operating temperature of 175°C. Includes fast switching times with a turn-on delay of 11ns and a fall time of 43ns. RoHS compliant.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Vishay IRF540SPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
28A
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
77mR
Fall Time
43ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
77mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
53ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF540SPBF Datasheet
Download the complete datasheet for Vishay IRF540SPBF to view detailed technical specifications.
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