N-channel MOSFET with 200V drain-source voltage and 3.3A continuous drain current. Features 1.5 Ohm maximum drain-source resistance and 140pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 36W. Packaged in a TO-220-3 through-hole mount configuration. Includes 8.2ns turn-on delay and 8.9ns fall time.
PackageTO-220-3
Current Rating3.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF610 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.3A
Current Rating
3.3A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF610 Datasheet
Download the complete datasheet for Vishay IRF610 to view detailed technical specifications.
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