N-channel power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. Offers a low 400mΩ drain-source on-resistance at a nominal gate-source voltage of 4V. This silicon metal-oxide semiconductor FET is designed for surface mounting in a TO-263 package, with a maximum power dissipation of 3W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 9.4ns and fall time of 20ns.
Vishay IRF630SPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9.4ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
No datasheet is available for this part.
