Vishay
IRF634NSPBF
Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF634NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
8A
Drain to Source Resistance
435mR
Drain to Source Voltage (Vdss)
250V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
620pF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
435mR
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Turn-On Delay Time
8.4ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF634NSPBF Datasheet
Download the complete datasheet for Vishay IRF634NSPBF to view detailed technical specifications.
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