Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Vishay IRF634NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 435mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 620pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 435mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 8.4ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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