N-Channel Power MOSFET, 250V Drain-Source Voltage, 8.1A Continuous Drain Current, and 0.45 Ohm Drain-Source Resistance. Features include a 4V Threshold Voltage, 770pF Input Capacitance, and 19ns Fall Time. This silicon Metal-Oxide-Semiconductor FET is designed for surface mounting in a D2PAK package, operating from -55°C to 150°C with a maximum power dissipation of 74W. It is RoHS compliant and suitable for various electronic applications.
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Vishay IRF634SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 9.6ns |
| Weight | 0.050717oz |
| Width | 9.02mm |
| RoHS | Compliant |
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