IRF634SPBF

N-Channel Power MOSFET, 250V Drain-Source Voltage, 8.1A Continuous Drain Current, and 0.45 Ohm Drain-Source Resistance. Features include a 4V Threshold Voltage, 770pF Input Capacitance, and 19ns Fall Time. This silicon Metal-Oxide-Semiconductor FET is designed for surface mounting in a D2PAK package, operating from -55°C to 150°C with a maximum power dissipation of 74W. It is RoHS compliant and suitable for various electronic applications.