N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 18A Continuous Drain Current (ID), and 0.18ohm Drain-to-Source Resistance. Features a 125W maximum power dissipation and operates within a temperature range of -55°C to 150°C. This through-hole component utilizes a TO-220AB package and offers fast switching speeds with turn-on delay time of 14ns and fall time of 36ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Vishay IRF640 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF640 Datasheet
Download the complete datasheet for Vishay IRF640 to view detailed technical specifications.
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