N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 0.18ohm drain-source on-resistance. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 130W. Key switching characteristics include a 14ns turn-on delay and 36ns fall time. This component is RoHS compliant.
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Vishay IRF640LPBF technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.084199oz |
| Width | 4.7mm |
| RoHS | Compliant |
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