N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 0.18ohm drain-source on-resistance. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 130W. Key switching characteristics include a 14ns turn-on delay and 36ns fall time. This component is RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF640LPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
180mR
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.084199oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF640LPBF Datasheet
Download the complete datasheet for Vishay IRF640LPBF to view detailed technical specifications.
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