N-Channel Power MOSFET, D2PAK package, 200V Drain-Source Voltage (Vdss), 18A Continuous Drain Current (ID), and 180mΩ maximum Drain-Source On-Resistance (Rds On). Features include a 4V nominal Gate-Source Voltage (Vgs) and 4V threshold voltage, with turn-on delay of 14ns and fall time of 36ns. This silicon Metal-oxide Semiconductor FET offers 130W maximum power dissipation and operates from -55°C to 150°C. Surface mountable and RoHS compliant.
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Vishay IRF640SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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