N-Channel Power MOSFET, D2PAK package, 200V Drain-Source Voltage (Vdss), 18A Continuous Drain Current (ID), and 180mΩ maximum Drain-Source On-Resistance (Rds On). Features include a 4V nominal Gate-Source Voltage (Vgs) and 4V threshold voltage, with turn-on delay of 14ns and fall time of 36ns. This silicon Metal-oxide Semiconductor FET offers 130W maximum power dissipation and operates from -55°C to 150°C. Surface mountable and RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power130W
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Technical Specifications
Vishay IRF640SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
180mR
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF640SPBF Datasheet
Download the complete datasheet for Vishay IRF640SPBF to view detailed technical specifications.
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