N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. Offers a low 180mΩ drain-source on-resistance. Designed for efficient switching with a 14ns turn-on delay and 45ns turn-off delay. Housed in a TO-263AB (D2PAK) package, this silicon Metal-oxide Semiconductor FET supports both through-hole and surface mount configurations. Maximum power dissipation is rated at 130W, with an operating temperature range of -55°C to 150°C.
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Vishay IRF640STRLPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole, Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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