N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. Offers a low 180mΩ drain-source on-resistance. Designed for efficient switching with a 14ns turn-on delay and 45ns turn-off delay. Housed in a TO-263AB (D2PAK) package, this silicon Metal-oxide Semiconductor FET supports both through-hole and surface mount configurations. Maximum power dissipation is rated at 130W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF640STRLPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
180mR
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole, Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
180mR
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF640STRLPBF Datasheet
Download the complete datasheet for Vishay IRF640STRLPBF to view detailed technical specifications.
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