N-Channel Power MOSFET, TO-263-3 package, featuring 200V Drain-Source Voltage (Vdss) and 18A Continuous Drain Current (ID). Offers a low 180mΩ Drain-Source On-Resistance (Rds On Max) and 130W Max Power Dissipation. Designed for surface mounting with a 1.3nF input capacitance and fast switching times including 14ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF640STRRPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
180mR
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
180mR
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF640STRRPBF Datasheet
Download the complete datasheet for Vishay IRF640STRRPBF to view detailed technical specifications.
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