
N-Channel Power MOSFET, TO-263-3 package, featuring 200V Drain-Source Voltage (Vdss) and 18A Continuous Drain Current (ID). Offers a low 180mΩ Drain-Source On-Resistance (Rds On Max) and 130W Max Power Dissipation. Designed for surface mounting with a 1.3nF input capacitance and fast switching times including 14ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Vishay IRF640STRRPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF640STRRPBF to view detailed technical specifications.
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