N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss), 3.3A Continuous Drain Current (ID), and 1.8 Ohm Drain-Source Resistance (Rds On). Features include 10ns turn-on delay, 30ns turn-off delay, and 13ns fall time. This silicon, metal-oxide semiconductor field-effect transistor is housed in a TO-263-3 surface-mount package, offering a maximum power dissipation of 3.1W and operating temperature range of -55°C to 150°C. It is lead-free and RoHS compliant.
Vishay IRF720SPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
No datasheet is available for this part.
