N-Channel Power MOSFET, 400V Vdss, 5.5A continuous drain current, and 1 ohm Rds On. Features include a 14ns fall time, 38ns turn-off delay, and 10ns turn-on delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-263-3 (D2PAK) surface-mount package, operating from -55°C to 150°C. It offers 700pF input capacitance and 3.1W max power dissipation, with lead-free and RoHS compliance.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730SPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF730SPBF Datasheet
Download the complete datasheet for Vishay IRF730SPBF to view detailed technical specifications.
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