N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current (ID), and 0.55ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting. Key specifications include a maximum power dissipation of 125W, a gate-to-source voltage of 20V, and operating temperatures from -55°C to 150°C. Switching characteristics include a 14ns turn-on delay and a 24ns fall time.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF740 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
400V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
550mR
RoHS Compliant
No
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
DC Rated Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF740 Datasheet
Download the complete datasheet for Vishay IRF740 to view detailed technical specifications.
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