IRF740

N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current (ID), and 0.55ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting. Key specifications include a maximum power dissipation of 125W, a gate-to-source voltage of 20V, and operating temperatures from -55°C to 150°C. Switching characteristics include a 14ns turn-on delay and a 24ns fall time.