N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current (ID), and 0.55ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting. Key specifications include a maximum power dissipation of 125W, a gate-to-source voltage of 20V, and operating temperatures from -55°C to 150°C. Switching characteristics include a 14ns turn-on delay and a 24ns fall time.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF740 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 400V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF740 Datasheet
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