N-channel power MOSFET featuring 500V drain-source breakdown voltage and 2.5A continuous drain current. This surface-mount device offers a low 3-ohm drain-source on-resistance and a maximum power dissipation of 3.1W. Key switching characteristics include an 8ns turn-on delay and a 16ns fall time, with input capacitance at 360pF. Encased in a D2PAK package, this RoHS compliant component operates from -55°C to 150°C.
Vishay IRF820SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 500V |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
No datasheet is available for this part.
