N-Channel Power MOSFET, featuring 500V Drain-to-Source Voltage (Vdss) and 4.5A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 1.5 Ohm drain-source on-resistance (Rds On Max) and a maximum power dissipation of 74W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a turn-on delay of 8.2ns and fall time of 16ns. The component is RoHS compliant.
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Vishay IRF830PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 74W |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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