N-Channel Power MOSFET, featuring 500V Drain-to-Source Voltage (Vdss) and 4.5A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 1.5 Ohm drain-source on-resistance (Rds On Max) and a maximum power dissipation of 74W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a turn-on delay of 8.2ns and fall time of 16ns. The component is RoHS compliant.
PackageTO-220AB
Current Rating4.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF830PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.5R
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
610pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
74W
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
42ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF830PBF Datasheet
Download the complete datasheet for Vishay IRF830PBF to view detailed technical specifications.
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