N-channel MOSFET transistor featuring a 500V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 850mΩ drain-source on-resistance and 125W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Housed in a TO-220AB package, it supports up to 20V gate-to-source voltage.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
850mR
RoHS Compliant
No
Turn-Off Delay Time
49ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF840 Datasheet
Download the complete datasheet for Vishay IRF840 to view detailed technical specifications.
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