
N-Channel Power MOSFET, 500V Drain-Source Voltage, 8A Continuous Drain Current, and 0.85 Ohm Drain-Source Resistance. Features a TO-220AB through-hole package, 125W maximum power dissipation, and operates from -55°C to 150°C. Includes 19ns fall time, 26ns turn-off delay, and 11ns turn-on delay.
Vishay IRF840A technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.018nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRF840A to view detailed technical specifications.
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