N-Channel Power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.85ohm drain-source resistance and is housed in a TO-262-3 package for through-hole mounting. Key switching characteristics include an 11ns turn-on delay and 19ns fall time, with a maximum power dissipation of 3.1W. Operating temperature range spans from -55°C to 150°C.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRF840ALPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 1.018nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.084199oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF840ALPBF Datasheet
Download the complete datasheet for Vishay IRF840ALPBF to view detailed technical specifications.
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