N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 8A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.85ohm drain-source on-resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 19ns fall time and 11ns turn-on delay time.
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Vishay IRF840APBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.018nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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