N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. This silicon metal-oxide semiconductor FET offers 0.85 ohm drain-source resistance and 125W maximum power dissipation. With a nominal gate-source threshold voltage of 4V and a maximum gate-source voltage of 20V, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
49ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF840PBF Datasheet
Download the complete datasheet for Vishay IRF840PBF to view detailed technical specifications.
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