N-Channel Power MOSFET, D2PAK package, featuring 500V drain-source voltage and 8A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers 0.85 ohm drain-source resistance and 125W maximum power dissipation. Ideal for surface mount applications, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and 20ns fall time.
PackageD2PAK
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
850mR
RoHS Compliant
No
Turn-Off Delay Time
49ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF840S Datasheet
Download the complete datasheet for Vishay IRF840S to view detailed technical specifications.
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