P-channel MOSFET with 100V drain-source breakdown voltage and 4A continuous drain current. Features 1.2 ohm maximum drain-source on-resistance and 43W power dissipation. Operates from -55°C to 175°C, with 10ns turn-on delay and 17ns fall time. Packaged in a TO-220AB through-hole mount, this RoHS compliant component offers a 20V gate-source voltage rating.
PackageTO-220AB
Current Rating-4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9510PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
4A
Current Rating
-4A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
1.2R
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
200pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
43W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9510PBF Datasheet
Download the complete datasheet for Vishay IRF9510PBF to view detailed technical specifications.
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