P-channel MOSFET with 100V drain-source voltage and 6.8A continuous drain current. Features 600mΩ drain-source on-resistance and 60W power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in TO-220AB for through-hole mounting.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power60W
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Technical Specifications
Vishay IRF9520 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.8A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
600mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
390pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF9520 Datasheet
Download the complete datasheet for Vishay IRF9520 to view detailed technical specifications.
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