P-channel MOSFET with a continuous drain current of 12A and a drain-source breakdown voltage of -100V. Features a low drain-source on-resistance of 300mΩ at a gate-source voltage of 10V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Packaged in a TO-220AB through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220AB
Current Rating-12A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9530PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 12A |
| Current Rating | -12A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9530PBF Datasheet
Download the complete datasheet for Vishay IRF9530PBF to view detailed technical specifications.
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