P-channel MOSFET featuring a -100V drain-source voltage and 19A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include a 17ns turn-on delay and 34ns turn-off delay.
PackageTO-220AB
Current Rating-19A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9540 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 19A |
| Current Rating | -19A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | -100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF9540 Datasheet
Download the complete datasheet for Vishay IRF9540 to view detailed technical specifications.
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