P-channel power MOSFET featuring a -200V drain-source breakdown voltage and 3.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.5 ohm drain-source on-resistance and a maximum power dissipation of 40W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 15ns turn-on delay and 15ns fall time.
Vishay IRF9620PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | -3.5A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
