Vishay
IRF9630
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9630 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
700pF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
800mR
RoHS Compliant
No
Turn-Off Delay Time
28ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF9630 Datasheet
Download the complete datasheet for Vishay IRF9630 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.