P-channel power MOSFET, TO-263AB package, featuring 200V drain-source voltage and 6.5A continuous drain current. Offers 800mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 74W. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 24ns. RoHS compliant and available in tape and reel packaging.
PackageTO-220-3
MountingThrough Hole, Surface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9630STRLPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Dual Supply Voltage
-200V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
700pF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole, Surface Mount
Nominal Vgs
4V
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
-2V
Turn-Off Delay Time
28ns
Turn-On Delay Time
12ns
Weight
0.050717oz
Width
9.02mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9630STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9630STRLPBF to view detailed technical specifications.
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