P-channel power MOSFET featuring 200V drain-source voltage and 11A continuous drain current. Offers a low 500mΩ drain-source on-resistance. This silicon metal-oxide semiconductor FET is housed in a D2PAK surface-mount package. Key specifications include a 4V threshold voltage and 3W maximum power dissipation.
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Vishay IRF9640STRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 500mR |
| Dual Supply Voltage | 200V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.068654oz |
| Width | 9.65mm |
| RoHS | Compliant |
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