P-channel power MOSFET featuring 200V drain-source voltage and 11A continuous drain current. Offers a low 500mΩ drain-source on-resistance. This silicon metal-oxide semiconductor FET is housed in a D2PAK surface-mount package. Key specifications include a 4V threshold voltage and 3W maximum power dissipation.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay IRF9640STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
500mR
Dual Supply Voltage
200V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
39ns
Turn-On Delay Time
14ns
Weight
0.068654oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9640STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9640STRLPBF to view detailed technical specifications.
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