P-channel MOSFET with 6.7A continuous drain current and 50V drain-to-source voltage. Features 0.5 ohm drain-to-source resistance, 43W power dissipation, and a TO-220AB through-hole package. Operates from -55°C to 175°C with a threshold voltage of -4V. Includes 270pF input capacitance and fast switching times with 11ns turn-on and 10ns turn-off delays.
Vishay IRF9Z10PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 270pF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 43W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
