P-channel MOSFET featuring a 60V drain-source voltage and 6.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 500mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 43W. Key switching characteristics include a 31ns fall time, 10ns turn-off delay, and 11ns turn-on delay.
PackageTO-220-3
Current Rating-6.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9Z14 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.7A
Current Rating
-6.7A
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
270pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
10ns
Turn-On Delay Time
11ns
DC Rated Voltage
-60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF9Z14 Datasheet
Download the complete datasheet for Vishay IRF9Z14 to view detailed technical specifications.
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