P-channel MOSFET featuring a 60V drain-source voltage and 6.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 500mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 43W. Key switching characteristics include a 31ns fall time, 10ns turn-off delay, and 11ns turn-on delay.
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Vishay IRF9Z14 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | -6.7A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 270pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -60V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
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