Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Vishay IRF9Z14L technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | -6.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 270pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Rds On Max | 500mR |
| RoHS Compliant | No |
| DC Rated Voltage | -60V |
| RoHS | Not Compliant |
No datasheet is available for this part.
