IRF9Z14LPBF

P-channel MOSFET, 60V drain-source voltage, 6.7A continuous drain current, and 0.5 ohm drain-source resistance. Features include a 20V gate-source voltage, 270pF input capacitance, and fast switching times with a 10ns turn-on delay and 31ns fall time. This silicon metal-oxide semiconductor FET is housed in a TO-262-3 package for through-hole mounting, offering a maximum power dissipation of 43W and operating temperature range of -55°C to 175°C. It is lead-free and RoHS compliant.