P-channel MOSFET with 50V drain-source voltage and 9.7A continuous drain current. Features 280mΩ maximum drain-source on-resistance and 40W maximum power dissipation. Operates from -55°C to 150°C with a nominal gate-source voltage of -4V. Through-hole mounting in a TO-220AB package.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9Z20PBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 480pF |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9Z20PBF Datasheet
Download the complete datasheet for Vishay IRF9Z20PBF to view detailed technical specifications.
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