P-channel power MOSFET with 60V drain-source voltage and 11A continuous drain current. Features low 280mΩ drain-source resistance and 60W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 13ns and fall time of 29ns. Operates across a wide temperature range from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF9Z24STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 570pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9Z24STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9Z24STRLPBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
