P-channel power MOSFET for general-purpose applications. Features a continuous drain current of 18A and a drain-source voltage of -50V. Offers a low drain-source on-resistance of 140mΩ at a gate-source voltage of 10V. Housed in a TO-220-3 through-hole package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 74W.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF9Z30PBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
-50V
Drain-source On Resistance-Max
140mR
Fall Time
64ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
140mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9Z30PBF Datasheet
Download the complete datasheet for Vishay IRF9Z30PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
