P-channel power MOSFET for general-purpose applications. Features a continuous drain current of 18A and a drain-source voltage of -50V. Offers a low drain-source on-resistance of 140mΩ at a gate-source voltage of 10V. Housed in a TO-220-3 through-hole package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 74W.
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Vishay IRF9Z30PBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | -50V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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