N-Channel Power MOSFET featuring 500V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.35ohm drain-source resistance and 280W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it boasts fast switching times with a 20ns turn-on delay and 38ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for high-power applications.
PackageTO-220-3
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFB16N50KPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 2.21nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB16N50KPBF Datasheet
Download the complete datasheet for Vishay IRFB16N50KPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
