N-Channel Power MOSFET, 500V Vdss, 16A continuous drain current, and 320mΩ maximum drain-source on-resistance. Features a TO-220AB through-hole package, 220W power dissipation, and fast switching speeds with a 21ns turn-on delay and 50ns turn-off delay. Operates from -55°C to 150°C with a 5V nominal gate-source voltage and 30V maximum gate-source voltage. This silicon metal-oxide semiconductor FET is RoHS compliant.
Vishay IRFB17N50LPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 2.76nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
