N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 24A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.23 ohm on-state resistance and 340W maximum power dissipation. Designed for through-hole mounting in a TO-273AA package, it operates within a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
PackageTO-273-3
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBA22N50APBF technical specifications.
General
| Package/Case | TO-273-3 |
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 340W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 230R |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 230mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 46ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBA22N50APBF Datasheet
Download the complete datasheet for Vishay IRFBA22N50APBF to view detailed technical specifications.
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