N-Channel Power MOSFET, TO-220-3 package, featuring 600V drain-source breakdown voltage and 2.2A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 4.4 ohm drain-source on-resistance. Key switching characteristics include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time. Maximum power dissipation is rated at 50W, with operating temperatures ranging from -55°C to 150°C. Through-hole mounting is supported.
PackageTO-220-3
Current Rating2.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.4R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFBC20 Datasheet
Download the complete datasheet for Vishay IRFBC20 to view detailed technical specifications.
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