N-Channel Power MOSFET, TO-220-3 package, featuring 600V drain-source breakdown voltage and 2.2A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 4.4 ohm drain-source on-resistance. Key switching characteristics include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time. Maximum power dissipation is rated at 50W, with operating temperatures ranging from -55°C to 150°C. Through-hole mounting is supported.
PackageTO-220-3
Current Rating2.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 2.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 350pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.4R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFBC20 Datasheet
Download the complete datasheet for Vishay IRFBC20 to view detailed technical specifications.
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