N-Channel Power MOSFET with 600V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). Features 4.4 ohm maximum Drain-Source On-Resistance (Rds On Max) and 4V nominal Gate-Source Threshold Voltage. This silicon, metal-oxide semiconductor FET offers a 1-element configuration with a TO-220AB package for through-hole mounting. Operating temperature range from -55°C to 150°C, with 50W maximum power dissipation and 25ns fall time. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20PBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.4R
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
4.4R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFBC20PBF Datasheet
Download the complete datasheet for Vishay IRFBC20PBF to view detailed technical specifications.
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