N-Channel Power MOSFET with 600V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). Features 4.4 ohm maximum Drain-Source On-Resistance (Rds On Max) and 4V nominal Gate-Source Threshold Voltage. This silicon, metal-oxide semiconductor FET offers a 1-element configuration with a TO-220AB package for through-hole mounting. Operating temperature range from -55°C to 150°C, with 50W maximum power dissipation and 25ns fall time. RoHS compliant and lead-free.
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Vishay IRFBC20PBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 4.4R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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