N-Channel Power MOSFET with 600V Drain-Source Voltage (Vdss) and 3.6A Continuous Drain Current (ID). Features 2.2Ω Drain-Source On-Resistance (Rds On) and 74W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package for through-hole mounting. Offers fast switching with a 9.8ns turn-on delay and 12ns fall time. Operating temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30A technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 510pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFBC30A Datasheet
Download the complete datasheet for Vishay IRFBC30A to view detailed technical specifications.
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