N-Channel Power MOSFET, 600V Drain-Source Voltage, 3.6A Continuous Drain Current, 2.2 Ohm Drain-Source Resistance. Features include a 9.8ns turn-on delay, 19ns turn-off delay, and 12ns fall time. This silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 74W. Packaged in a D2PAK-3 (TO-263-3) for surface mounting, it is RoHS compliant.
Vishay IRFBC30ASPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
No datasheet is available for this part.
