N-Channel Power MOSFET, 600V Vds, 3.6A Continuous Drain Current, 2.2Ω Rds On. Features 11ns turn-on delay, 35ns turn-off delay, and 14ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 74W. Packaged in TO-262-3 for through-hole mounting, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
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| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
| RoHS | Compliant |
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