N-Channel Power MOSFET, 600V Vdss, 3.6A Continuous Drain Current (ID), and 2.2Ω Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package, 1-element configuration, and a maximum power dissipation of 74W. Operating temperature range is -55°C to 150°C, with turn-on delay time of 11ns and fall time of 14ns. Input capacitance is 660pF, and gate to source voltage is 20V.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFBC30SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 660pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30SPBF Datasheet
Download the complete datasheet for Vishay IRFBC30SPBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
