N-Channel Power MOSFET, D2PAK package, featuring 600V drain-source voltage and 6.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.2 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 130W. Ideal for surface mount applications, it operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 13ns and fall time of 20ns.
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Vishay IRFBC40S technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 600V |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Not Compliant |
